Applications of diamond as an ion transmission detector

Kamiya, Tomihiro; Kada, Wataru; Koka, Masashi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

Observation of transient currents induced in semiconductor diodes by heavy ion incidence using time resolved IBIC

Oshima, Takeshi; Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya; Deki, Manato; Kada, Wataru; Kamiya, Tomihiro

no journal, , 

Ion Beam Induced Charge (IBIC) is a useful technique to evaluate the quality of particle detectors. However, ions introduced into detectors as probes create crystal damage in detectors and as a result, their charge collection efficiency (CCE) decreases with increasing damage. For the accurate evaluation of the detector quality, it is important to measure CCE values without the degradation of their characteristics due to damage creation. Single ion hitting transient ion beam induced current (TIBIC) technique can solve this issue because charge induced by an ion incidence can be detected. In this study, using a TIBIC system installed at JAEA Takasaki, we measured charge induced in silicon (Si), silicon carbide (SiC) and diamond diodes by heavy ion incidence such as oxygen, silicon, gold ions with MeV range energies.